Specifications

CMOS technology	0.13μm
Pixel size	55μm x 55μm
Pixel matrix	256 x 256
Detector polarity	Electron collection Leakage current compensation optimal (I_DET > I_KRUM) Non-monotonicity of the ToT vs Q_in Hole collection Leakage current limited (I_DET < I_KRUM/2) Adaptive gain mode available
Leakage current	Electron collection: Up to 12nA/pixel (non-uniform) Hole collection 2nA/pixel
Peaking time	~100ns (Adaptive gain OFF) ~200ns (Adaptive gain ON)
Noise	61e^– rms
Threshold variation	~40e rms after trimming 5-bit adjustment
Minimum operating threshold	~600e-
Power consumption	5µA/pixel @1.2V i.e., ~165mW/cm² (low power mode) Digital 500mW Total 900mW
Analogue supply voltage	1.2V
ToA bin size	10ns