Specifications

CMOS technology0.13 μm
Pixel size55μm x 55μm
Pixel matrix256 x 256
DesignCERN
Signal polarityPositive and negative
Leakage current-10nA to +20nA
Time to peak120ns
Noise

80 e- (SPM)

175 e- (CSM)

Threshold variation (after tuning)35 e- rms
Minimum operating treshold700 e-
Configurable counter depths

2 x 1-bit
2 x 4-bit
2 x 12-bit
1 x 24-bit

25 DACs (10 9-bit and 15 8-bit) to set voltages in the chip
LVDS drivers and receivers (configuration of the chip in serial mode)
Parallel data port configurable to 1, 2, 4 or 8 LVDS lines
Readout time 8 parallel LVDS lines (200 MHz clock, 12 bit counters)491μs
Continuous Read/WriteYES
Hit rate 28 – 826 Mcounts/mm2/s depending on configuration
Total analog power consumption (nominal conditions)440mW
Total digital power consumption (@100MHz)450mW