| CMOS technology |
0.13μm |
| Pixel size |
FPM: 75μm x 75μm
SM: 150μm x 150μm
|
| Pixel matrix |
FPM: 320 x 320
SM: 160 x 160
|
| Signal polarity |
Negative |
|
Sensitive area
|
5.76cm²
|
|
Maximum count rate in SM-CSM
|
2.5 x 107 photons.mm−2s −1
|
|
Energy resolution
|
2.5KeV (FWHM, CdTe, CSM, 60keV)
|
|
Equivalent Noise Charge
|
~100e-
|
|
Minimum operating threshold
|
~560e- (SPM)
~930e- (CSM)
|
|
Maximum off-chip data rate
|
4.8Gb/s
|
|
Dynamic range
|
154keV, CdTe
|
|
Pixel counters in continuous read-write
|
FPM: 2 x [1 or 12] bits
SM: 8 x [1 or 12] bits
|
|
Pixel counters in sequential read-write
|
FPM: 2 x [1, 2, 12, 24] bits
SM: 8 x [1, 2, 12, 24] bits
|
|
Power supply voltage
|
1.2V
|
|
Power density consumption
|
FPM–SPM: 0.45W/cm2
FPM–CSM: 0.56W/cm2
SM–SPM: 0.23W/cm2
SM–CSM: 0.28W/cm2
|
