FAQ
| General | |
|---|---|
|
CMOS |
65nm |
|
Pixel size |
55μm x 55μm |
|
Pixel matrix |
512 x 448 |
|
Time resolution |
~200ps |
|
Charge measurement |
Noise: 80e- rms, Range: 200ke |
|
Minimum operating threshold |
~500e- |
|
Hit arrival timing (ToA) |
LSB=195ps, range: 1.638ms |
|
Readout bandwidth |
20.48 Gbps (4x 5.12 Gbps) |
|
Interface |
3x 147 I/O TSV/Wirebond |
|
Power supply voltage |
1.2V |
|
Power consumption |
~3.5W |
| Readout modes | |||
|---|---|---|---|
|
Tracking (data driven) |
Imaging (frame-based) |
||
|
Mode |
ToT & ToA |
Mode |
CRW: Pixel Counter (6/16-bit) |
|
Data |
64-bit per hit |
Frame rate |
Up to 89kFPS |
|
Max hit rate |
3.58x106 hits/mm2/s (10.8 KHz / pixel) |
Max hit rate |
~ 5 x 109 hits/mm2/s |
Features:
- Pixel size 55μm x 55μm.
- 512 x 448 pixels.
- Readout dead-time-free modes.
- Data-driven or frame-based (sequential or continuous read/write) readout.
- Large sensitive area (6.93 cm2) with almost no dead area (<0.5%).
- Larger chip area and improved time stamp precision and hit rate capability compared to Timepix3.
- 4-side buttable: 3x ‘hidden’ periphery TSV/IO.
Applications:
- X-ray and neutron imaging
- Particle track reconstruction
- Electron detectors
- Material analysis
- Synchrotrons
| General | |
|---|---|
| CMOS technology | 0.13μm |
| Pixel size |
FPM: 75μm x 75μm SM: 150μm x 150μm |
| Pixel matrix |
FPM: 320 x 320 SM: 160 x 160 |
| Signal polarity | Negative |
|
Sensitive area |
5.76cm² |
|
Maximum count rate in SM-CSM |
2.5 x 107 photons.mm−2s −1 |
|
Energy resolution |
2.5KeV (FWHM, CdTe, CSM, 60keV) |
|
Equivalent Noise Charge |
~100e- |
|
Minimum operating threshold |
~560e- (SPM) ~930e- (CSM) |
|
Maximum off-chip data rate |
4.8Gb/s |
|
Dynamic range |
154keV, CdTe |
|
Pixel counters in continuous read-write |
FPM: 2 x [1 or 12] bits SM: 8 x [1 or 12] bits |
|
Pixel counters in sequential read-write |
FPM: 2 x [1, 2, 12, 24] bits SM: 8 x [1, 2, 12, 24] bits |
|
Power supply voltage |
1.2V |
|
Power density consumption |
FPM–SPM: 0.45W/cm2 FPM–CSM: 0.56W/cm2 SM–SPM: 0.23W/cm2 SM–CSM: 0.28W/cm2 |
Features:
- Available in Fine Pitch Mode (sensor pixel pitch = readout pixel pitch) and Spectroscopic Mode (sensor pixel pitch = 2 x readout pixel pitch).
- High gain mode (low linearity and lower noise) and low gain mode.
- Single pixel and charge summing acquisition modes.
- Sequential or continuous read/write readout architecture.
- Inter-pixel architecture to correct charge sharing and fluorescence photons.
- 4-side buttable (TSV).
Applications:
- Adaptive optics and other visible or near visible light
- Astrophysics
- Dosimetry
- Electron microscopy
- Life sciences
- Non-destructive testing
Features:
- Pixel size 55μm x 55μm.
- 256 x 256 pixels.
- 28 bits/pixel.
- Simultaneous ToT and ToA.
- Separate ToT and ToA clock frequencies.
- Readout dead-time-free modes.
- Frame-based sequential or continuous read/write modes.
- Digital and analogue pixel masking available per pixel (turn off power consumption in unused pixels).
- Linear front-end gain, possibility to configure for ‘logarithmic’ gain mode only in positive polarity.
- 3-side buttable.
- Wire bonding pads can facilitate TSV processing.
Applications:
- X-ray imaging
- Material analysis
- Particle track reconstruction
- Non-destructive testing
| General | |
|---|---|
| CMOS technology | 0.13μm |
| Pixel size | 55μm x 55μm |
| Pixel matrix | 256 x 256 |
| Detector polarity |
Electron collection
Hole collection
|
| Leakage current |
Electron collection: Up to 12nA/pixel (non-uniform) Hole collection 2nA/pixel |
| Peaking time |
~100ns (Adaptive gain OFF) ~200ns (Adaptive gain ON) |
| Noise | 61e- rms |
| Threshold variation | ~40e rms after trimming 5-bit adjustment |
| Minimum operating threshold | ~600e- |
| Power consumption |
5µA/pixel @1.2V i.e., ~165mW/cm2 (low power mode) Digital 500mW Total 900mW |
| Analogue supply voltage | 1.2V |
| ToA bin size | 10ns |
| General | |
|---|---|
| CMOS technology | 0.13μm |
| Pixel size | 55μm x 55μm |
| Pixel matrix | 256 x 256 |
| Design | CERN, NIKHEF, Bonn University |
| Analog front end (pixel cell) | |
|---|---|
| Signal polarity | Positive and negative |
| Leakage current | -10nA to +20nA |
| TOA jitter and mismatch | Compatible with 1.56ns resolution (gas detector applications) |
| Time to peak | 25ns |
| Noise | 62 e- rms |
| Threshold variation (after tuning) | 30 e- rms |
| Minimum operating treshold | 500 e- |
| Digital part (pixel cell + periphery) | |
|---|---|
| TOA precision | 1.56ns |
| Number of bits per hit | 48 |
| Data sent per hit | x, y TOT (10 bits) TOA (18 bits) |
| Readout uses up to 8 parallel LVDS lines (200 MHZ clock) | |
| Total analog power consumption (nominal conditions) | 440mW |
| Total digital power consumption (@100MHz) | 450mW |
Features:
- Pixel size 55μm x 55μm
- 256 x 256 pixels
- Timepix3 is suitable for readout of both semiconductor detectors and gas-filled detectors
- Single thresholds per pixel each with 4 bits of local adjustment
- Two main measurement modes: (1) simultaneous 10 bit ToT and 18 bit TOA and (2) 10 bit event counting and 14 bit integral TOT
- TOT monotonic for large positive charges
- Fast TOA for time stamping with a precision of 1.56 ns
- Data driven readout: dead time free, for a maximum hit rate of 40 Mhits/s/cm^2
- Shutdown/wake-up features for power pulsing tests on a full system
- 3-side buttable (with a single 1.2mm dead edge)
- TSV ready
Applications:
- X-rays imaging
- Particle track reconstruction.
- Timepix3 is suitable for readout of both semiconductor detectors and gas-filled detectors.
| General | |
|---|---|
| CMOS technology | 0.13 μm |
| Pixel size | 55μm x 55μm |
| Pixel matrix | 256 x 256 |
| Design | CERN |
| Analog front end (pixel cell) | |
|---|---|
| Signal polarity | Positive and negative |
| Leakage current | -10nA to +20nA |
| Time to peak | 120ns |
| Noise |
80 e- (SPM) 175 e- (CSM) |
| Threshold variation (after tuning) | 35 e- rms |
| Minimum operating treshold | 700 e- |
| Digital part (pixel cell + periphery) | |
|---|---|
| Configurable counter depths |
2 x 1-bit |
| 25 DACs (10 9-bit and 15 8-bit) to set voltages in the chip | |
| LVDS drivers and receivers (configuration of the chip in serial mode) | |
| Parallel data port configurable to 1, 2, 4 or 8 LVDS lines | |
| Readout time 8 parallel LVDS lines (200 MHz clock, 12 bit counters) | 491μs |
| Continuous Read/Write | YES |
| Hit rate 28 - 826 Mcounts/mm2/s depending on configuration | |
| Total analog power consumption (nominal conditions) | 440mW |
| Total digital power consumption (@100MHz) | 450mW |
Features:
- Pixel size 55x55μm or 110μm x 110μm
- 256 x 256 or 128 x 128 pixels
- Charge summing and allocation scheme – mitigating charge sharing
- 2 thresholds per 55mm pixel each with 5 bits of local adjustment
- High gain mode (HG, lower linearity, lower noise) or low gain mode (LG)
- Configurable counter depths: 2 x 1-bit, 2 x 4-bit, 2 x 12-bit, 1 x 24-bit
- Continuous or sequential data acquisition and readout
- 3-side buttable (with a single 0.8mm dead edge)
- TSV ready
Applications:
- Adaptive optics and other visible or near visible light applications
- Astrophysics
- Background radiation monitoring
- Digital Autoradiography
- Dosimetry
- Education
- Electron microscopy
- Life Sciences
- Neutron imaging
- Various X-ray and gamma-ray imaging applications
- X-ray polarimetry measurements