Specifications

General
CMOS technology 0.25μm
Pixel size 55μm x 55μm
Pixel matrix 256 x 256
Design CERN
Analog front end (pixel cell)
Positive and negative signal polarity  
Leakage current -10nA to +20nA
Time to peak 100ns
Noise 100 e- rms
Threshold variation (after tuning) 35 e- rms
Minimum operating treshold 700 e-
Digital part (pixel cell + periphery)
1 counter / shift register 14 bits (stops at 11810 counts)
Periphery

13 8-bit DACs to set voltages in the chip

Serial raedout 1-bit LVDS

Parallel readout 32-bit CMOS

Readout time in serial mode (100 MHz clock): 9μs

Readout time in parallel mode (100 MHz clock): 266μs

Total analog power consumption (nominal conditions) 440mW
Total digital power consumption (@100MHz) 450mW